Items where Author is "Shao, L"

Article

Di, ZF and Wang, YQ and Nastasi, M and Shao, L and Lee, JK and Theodore, ND (2008) Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon. Applied Physics Letters, 93 (10). ISSN 0003-6951

Di, Z and Wang, Y and Nastasi, M and Rossi, F and Lee, JK and Shao, L and Thompson, PE (2007) Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si. Applied Physics Letters, 91 (24). ISSN 0003-6951

Lee, JK and Lin, Y and Jia, QX and Höchbauer, T and Jung, HS and Shao, L and Misra, A and Nastasi, M (2006) Role of strain in the blistering of hydrogen-implanted silicon. Applied Physics Letters, 89 (10). ISSN 0003-6951

Shao, L and Lee, JK and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy. Journal of Applied Physics, 99 (12). ISSN 0021-8979

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) H-induced platelet and crack formation in hydrogenated epitaxial Si/Si <inf>0.98</inf>B <inf>0.02</inf>/Si structures. Applied Physics Letters, 88 (2). 1 - 3. ISSN 0003-6951

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87 (25). 1 - 3. ISSN 0003-6951

Shao, L and Lin, Y and Lee, JK and Jia, QX and Wang, Y and Nastasi, M and Thompson, PE and Theodore, ND and Chu, PK and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation. Applied Physics Letters, 87 (9). ISSN 0003-6951