Items where Author is "Nastasi, M"

Article

Lee, JK and Nastasi, M (2012) Ferroelectric properties of Pb(Zr,Ti)O<inf>3</inf> films under ion-beam induced strain. Journal of Applied Physics, 112 (10). ISSN 0021-8979

Di, ZF and Wang, YQ and Nastasi, M and Shao, L and Lee, JK and Theodore, ND (2008) Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon. Applied Physics Letters, 93 (10). ISSN 0003-6951

Di, Z and Wang, Y and Nastasi, M and Rossi, F and Lee, JK and Shao, L and Thompson, PE (2007) Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si. Applied Physics Letters, 91 (24). ISSN 0003-6951

Thompson, DC and Alford, TL and Mayer, JW and Höchbauer, T and Lee, JK and Nastasi, M and Lau, SS and Theodore, ND and Chu, PK (2007) Microwave enhanced ion-cut silicon layer transfer. Journal of Applied Physics, 101 (11). ISSN 0021-8979

Lee, JK and Hundley, MF and Thompson, JD and Schulze, RK and Jung, HS and Valdez, JA and Nastasi, M and Zhang, X (2006) Magnetic anisotropy study of ion-beam synthesized cobalt nanocrystals. Applied Physics Letters, 89 (18). ISSN 0003-6951

Lee, JK and Lin, Y and Jia, QX and Höchbauer, T and Jung, HS and Shao, L and Misra, A and Nastasi, M (2006) Role of strain in the blistering of hydrogen-implanted silicon. Applied Physics Letters, 89 (10). ISSN 0003-6951

Lee, JK and Muenchausen, RE and Lee, JS and Jia, QX and Nastasi, M and Valdez, JA and Bennett, BL and Cooke, DW and Lee, SY (2006) Structure and optical properties of Lu <inf>2</inf>SiO <inf>5</inf>:Ce phosphor thin films. Applied Physics Letters, 89 (10). ISSN 0003-6951

Kim, JW and Kang, HS and Kim, JH and Lee, SY and Lee, JK and Nastasi, M (2006) Variation of structural, electrical, and optical properties of Zn <inf>1-x</inf>Mg <inf>x</inf>O thin films. Journal of Applied Physics, 100 (3). ISSN 0021-8979

Shao, L and Lee, JK and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy. Journal of Applied Physics, 99 (12). ISSN 0021-8979

Jung, HS and Lee, JK and Nastasi, M and Kim, JR and Lee, SW and Kim, JY and Park, JS and Hong, KS and Shin, H (2006) Enhancing photocatalytic activity by using TiO <inf>2</inf>-MgO core-shell-structured nanoparticles. Applied Physics Letters, 88 (1). ISSN 0003-6951

Cooke, DW and Lee, JK and Bennett, BL and Groves, JR and Jacobsohn, LG and McKigney, EA and Muenchausen, RE and Nastasi, M and Sickafus, KE and Tang, M and Valdez, JA and Kim, JY and Hong, KS (2006) Luminescent properties and reduced dimensional behavior of hydrothermally prepared Y <inf>2</inf>SiO <inf>5</inf>: Ce nanophosphors. Applied Physics Letters, 88 (10). ISSN 0003-6951

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) H-induced platelet and crack formation in hydrogenated epitaxial Si/Si <inf>0.98</inf>B <inf>0.02</inf>/Si structures. Applied Physics Letters, 88 (2). 1 - 3. ISSN 0003-6951

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87 (25). 1 - 3. ISSN 0003-6951

Shao, L and Lin, Y and Lee, JK and Jia, QX and Wang, Y and Nastasi, M and Thompson, PE and Theodore, ND and Chu, PK and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation. Applied Physics Letters, 87 (9). ISSN 0003-6951

Park, NM and Kim, TY and Kim, KH and Sung, GY and Kim, BH and Park, SJ and Cho, KS and Shin, JH and Lee, JK and Nastasi, M (2005) Effect of amorphous Si quantum-dot size on 1.54 μm luminescence of Er. Journal of the Electrochemical Society, 152 (6). ISSN 0013-4651

Nastasi, M and Höchbauer, T and Lee, JK and Misra, A and Hirth, JP and Ridgway, M and Lafford, T (2005) Nucleation and growth of platelets in hydrogen-ion-implanted silicon. Applied Physics Letters, 86 (15). 1 - 3. ISSN 0003-6951

Lee, JK and Tewell, CR and Schulze, RK and Nastasi, M and Hamby, DW and Lucca, DA and Jung, HS and Hong, KS (2005) Synthesis of ZnO nanocrystals by subsequent implantation of Zn and O species. Applied Physics Letters, 86 (18). 1 - 3. ISSN 0003-6951

Lee, JK and Nastasi, M and Hamby, DW and Lucca, DA (2005) Optical observation of donor-bound excitons in hydrogen-implanted ZnO. Applied Physics Letters, 86 (17). 1 - 3. ISSN 0003-6951

Chen, P and Chu, PK and Höchbauer, T and Lee, JK and Nastasi, M and Buca, D and Mantl, S and Loo, R and Caymax, M and Alford, T and Mayer, JW and Theodore, ND and Cai, M and Schmidt, B and Lau, SS (2005) Investigation of plasma hydrogenation and trapping mechanism for layer transfer. Applied Physics Letters, 86 (3). 1 - 3. ISSN 0003-6951