Items where Author is "Chen, P"

Article

Etheridge, SL and Ray, S and Li, S and Hamblet, NS and Lijam, N and Tsang, M and Greer, J and Kardos, N and Wang, J and Sussman, DJ and Chen, P and Wynshaw-Boris, A (2008) Murine dishevelled 3 functions in redundant pathways with dishevelled 1 and 2 in normal cardiac outflow tract, cochlea, and neural tube development. PLoS Genetics, 4 (11). ISSN 1553-7390

Shao, L and Lee, JK and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy. Journal of Applied Physics, 99 (12). ISSN 0021-8979

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) H-induced platelet and crack formation in hydrogenated epitaxial Si/Si <inf>0.98</inf>B <inf>0.02</inf>/Si structures. Applied Physics Letters, 88 (2). 1 - 3. ISSN 0003-6951

Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87 (25). 1 - 3. ISSN 0003-6951

Shao, L and Lin, Y and Lee, JK and Jia, QX and Wang, Y and Nastasi, M and Thompson, PE and Theodore, ND and Chu, PK and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation. Applied Physics Letters, 87 (9). ISSN 0003-6951

Chen, P and Chu, PK and Höchbauer, T and Lee, JK and Nastasi, M and Buca, D and Mantl, S and Loo, R and Caymax, M and Alford, T and Mayer, JW and Theodore, ND and Cai, M and Schmidt, B and Lau, SS (2005) Investigation of plasma hydrogenation and trapping mechanism for layer transfer. Applied Physics Letters, 86 (3). 1 - 3. ISSN 0003-6951