Items where Author is "Alford, TL"
Group by: Item Type | No Grouping Jump to: Article Number of items: 5. ArticleThompson, DC and Alford, TL and Mayer, JW and Höchbauer, T and Lee, JK and Nastasi, M and Lau, SS and Theodore, ND and Chu, PK (2007) Microwave enhanced ion-cut silicon layer transfer. Journal of Applied Physics, 101 (11). ISSN 0021-8979 Shao, L and Lee, JK and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy. Journal of Applied Physics, 99 (12). ISSN 0021-8979 Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2006) H-induced platelet and crack formation in hydrogenated epitaxial Si/Si <inf>0.98</inf>B <inf>0.02</inf>/Si structures. Applied Physics Letters, 88 (2). 1 - 3. ISSN 0003-6951 Shao, L and Lin, Y and Swadener, JG and Lee, JK and Jia, QX and Wang, YQ and Nastasi, M and Thompson, PE and Theodore, ND and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Applied Physics Letters, 87 (25). 1 - 3. ISSN 0003-6951 Shao, L and Lin, Y and Lee, JK and Jia, QX and Wang, Y and Nastasi, M and Thompson, PE and Theodore, ND and Chu, PK and Alford, TL and Mayer, JW and Chen, P and Lau, SS (2005) Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation. Applied Physics Letters, 87 (9). ISSN 0003-6951 |